IRLZ34NPBF vs IRLZ34NSTRLPBF 比較
詳細並排比較 IRLZ34NPBF 由 Infineon 與 IRLZ34NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLZ34NPBF | IRLZ34NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | — |
| 電晶體類型 | N-Channel HEXFET Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | — |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 110 A |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | — |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | — |
| Total Gate Charge (Qg) | 16.7 nC (typical) | 16.7 nC |
| Power Dissipation (PD) at Tc=25 C | 68 W | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | TO-220AB (through-hole, 3 leads + tab) | D2PAK (TO-263), surface mount |
| 安裝類型 | Through Hole | Surface Mount |
| RoHS 狀態 | Compliant (Pb-free PBF suffix) | Compliant (Pb-free) |
| MSL 等級 | Not applicable (through-hole) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC | — | 30 A |
| RDS(on) at VGS=5V | — | 35 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (5 V drive compatible) |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 68 W |
| 工作溫度範圍 | — | [DATA_NEEDED: operating temperature range] |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single with built-in diode |
| Switching Frequency Optimization | — | Below 100 kHz |
| Cell Structure | — | HEXFET planar (5th generation) |
| Qualification | — | JEDEC standard |