IRLZ34NSTRLPBF vs IRFR1205TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLZ34NSTRLPBF disebabkan oleh Infineon dan IRFR1205TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLZ34NSTRLPBF | IRFR1205TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | 160 A |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | 2 V min, 4 V max |
| Total Gate Charge (Qg) | 16.7 nC | 43.3 nC |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Kemasan | D2PAK (TO-263), surface mount | TO-252AA (DPAK) |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | — |
| Status RoHS | Compliant (Pb-free) | Compliant (PBF suffix = lead-free) |
| Technology | — | HEXFET (IR MOSFET, 5th generation) |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 44 A |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| On-Resistance RDS(on) at VGS=10V | — | 27 mOhm max |
| Power Dissition (PD) at TC=25C | — | 107 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen status] |