ISC008N06LM6ATMA1 vs ISC011N04NM7VATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC008N06LM6ATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC008N06LM6ATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 OptiMOS 7 Power-Transistor
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Ta 44 A —
Pulsed Drain Current (ID, pulse) at Tc 378 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 221 W —
Gate-Source Voltage (VGS) max +/-20 V —
RDS(on) max @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
Gate Threshold Voltage (VGS(th)) Logic Level (1.0 V to 2.4 V typical) —
Gambaran Suhu Operasi -55 C to +175 C (Tj) -55 °C to +175 °C (TJ)
Package Type PG-TDSON-8 (Surface Mount) —
Gaya Pemasangan Surface Mount, Tape & Reel —
Aras MSL 1 (per JEDEC J-STD-020) MSL 1 (per JEDEC J-STD-020)
RoHS / Lead-Free Status RoHS Compliant, Lead-Free —
Boson Bebas Yes —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Technology — Trench MOSFET, silicon
Kemasan — PG-TDSON-8 (source-down)
Jenis Pemasangan — Surface Mount
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)

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