ISC009N06LM5ATMA1 vs IPT067N20NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC009N06LM5ATMA1 disebabkan oleh Infineon dan IPT067N20NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC009N06LM5ATMA1 IPT067N20NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology OptiMOS 5 60V N-channel trench MOSFET Trench-gate OptiMOS 6 silicon
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 200 V
Continuous Drain Current (ID) at Ta 41 A —
Continuous Drain Current (ID) at Tc 348 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: VGS threshold typical] —
On-Resistance RDS(on) max at VGS=10V 0.9 mOhm —
Power Dissipation at Ta (PD) 3 W —
Power Dissipation at Tc (PD) 214 W —
Gambaran Suhu Operasi -55 C to +175 C -55C to +150C (junction)
Kemasan PG-TSON-8-3 (SuperSO8 5x6) PG-HSOF-8-1 (8-pin + exposed tab)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL moisture sensitivity level]
Status RoHS Compliant Compliant
Product Family — OptiMOS 6
Continuous Drain Current (ID) at TA=25C — 15.3 A
Continuous Drain Current (ID) at TC=25C — 137 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 300 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free — Yes
Configuration — Single N-channel

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