ISC009N06NM6ATMA1 vs ISC151N08NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC009N06NM6ATMA1 disebabkan oleh Infineon dan ISC151N08NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC009N06NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 60 V | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta=25C | 40 A | — |
| Pulsed Drain Current (IDM) at Tc=25C | 344 A | — |
| Power Dissition (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 221 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) typical value at VGS=10 V] | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TDSON-8 (3.3 x 3.3 mm) | PG-TDSON-8 FL |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 status] | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Arus Kumpal Tetap (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Technology | — | OptiMOS 6 |
| Bilangan Pin | — | 8 |
| Channel Mode | — | Enhancement |
| Suhu Operasi | — | -55 °C to +175 °C |