ISC009N06NM6ATMA1 vs ISC151N08NM6ATMA1 比較
詳細並排比較 ISC009N06NM6ATMA1 由 Infineon 與 ISC151N08NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC009N06NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 60 V | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta=25C | 40 A | — |
| Pulsed Drain Current (IDM) at Tc=25C | 344 A | — |
| Power Dissition (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 221 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) typical value at VGS=10 V] | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | — |
| 工作溫度範圍 | -55 °C to +175 °C | — |
| 封裝 | PG-TDSON-8 (3.3 x 3.3 mm) | PG-TDSON-8 FL |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes | — |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 status] | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| 連續汲極電流 (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Technology | — | OptiMOS 6 |
| 腳位數 | — | 8 |
| Channel Mode | — | Enhancement |
| 工作溫度 | — | -55 °C to +175 °C |