ISC011N03L5SATMA1 vs BSC011N03LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N03L5SATMA1 disebabkan oleh Infineon dan BSC011N03LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC011N03L5SATMA1 | BSC011N03LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 / StrongIRFET 30 V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | — |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | — |
| Power Dissipation (PD) @ Tc=25C | 96 W | — |
| Kemasan | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-TDSON-8-1 (SuperSO8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 C to +175 C (TJ) | — |
| Technology | OptiMOS 5 trench MOSFET | — |
| Gate Drive | Logic-level compatible | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 |
| Product Series | — | OptiMOS 30V |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 37 A |
| Pulsed Drain Current (IDM) | — | 100 A (TC) |
| On-State Resistance (RDS(on)) at VGS=10V | — | 1.1 mOhm (typ) |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.2 V (typ 1.6 V) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at TC=25C | — | 96 W |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Gambaran Suhu Operasi | — | -55C to +150C |