ISC011N06LM5ATMA1 vs IQE004NE1LM7CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N06LM5ATMA1 disebabkan oleh Infineon dan IQE004NE1LM7CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC011N06LM5ATMA1 IQE004NE1LM7CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC011N06LM5ATMA1 —
Technology OptiMOS 5 N-Channel Trench Power MOSFET
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 15 V
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
Kemasan PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TTFN-9-3 (surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Gambaran Suhu Operasi -55C to +175C —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Series — OptiMOS 7
Continuous Drain Current (ID, TA=25C) — 58 A
Continuous Drain Current (ID, TC=25C) — 379 A
Power Dissipation (TA=25C) — 2.1 W
Power Dissipation (TC=25C) — 89 W
On-Resistance RDS(on) max — 0.45 mOhm at VGS=10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Suhu Operasi — -55C to +150C (junction)
Packaging — Tape & Reel (CGATMA1 suffix)
Polarization — N-Channel

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