ISC011N06LM5ATMA1 vs IQE004NE1LM7CGATMA1 Comparison
Detailed side-by-side comparison of ISC011N06LM5ATMA1 by Infineon and IQE004NE1LM7CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC011N06LM5ATMA1 | IQE004NE1LM7CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | N-Channel Trench Power MOSFET |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 15 V |
| Continuous Drain Current (ID) at Ta | 37 A | — |
| Continuous Drain Current (ID) at Tc | 288 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| Package | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TTFN-9-3 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | — |
| Operating Temperature Range | -55C to +175C | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Series | — | OptiMOS 7 |
| Continuous Drain Current (ID, TA=25C) | — | 58 A |
| Continuous Drain Current (ID, TC=25C) | — | 379 A |
| Power Dissipation (TA=25C) | — | 2.1 W |
| Power Dissipation (TC=25C) | — | 89 W |
| On-Resistance RDS(on) max | — | 0.45 mOhm at VGS=10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Operating Temperature | — | -55C to +150C (junction) |
| Packaging | — | Tape & Reel (CGATMA1 suffix) |
| Polarization | — | N-Channel |