ISC028N03LF2SATMA1 vs ISC015N03LF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC028N03LF2SATMA1 disebabkan oleh Infineon dan ISC015N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC028N03LF2SATMA1 | ISC015N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 30V | OptiMOS™ 2 (<= 40 V trench) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | 43 A |
| Continuous Drain Current (ID) at TC=25C | 128 A | 214 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | 1.5 mΩ |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8-62 (TDSON EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Gate Threshold Voltage VGS(th) | — | 2.35 V |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 125 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |