ISC028N03LF2SATMA1 vs ISC015N03LF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC028N03LF2SATMA1 sa pamamagitan ng Infineon at ISC015N03LF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 ✓ NakahandaInfineon
ISC015N03LF2SATMA1 - 30V 214A OptiMOS N-Ch MOSFET | Infineon
ISC015N03LF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC028N03LF2SATMA1 | ISC015N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 30V | OptiMOS™ 2 (<= 40 V trench) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | 43 A |
| Continuous Drain Current (ID) at TC=25C | 128 A | 214 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | 1.5 mΩ |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8-62 (TDSON EP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Gate Threshold Voltage VGS(th) | — | 2.35 V |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 125 W |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |