ISC030N12NM6ATMA1 vs ISC015N06NM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC030N12NM6ATMA1 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC030N12NM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 6 (trench) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS max) | 120 V | — |
| Continuous Drain Current (ID, Tc=25 C) | 194 A | — |
| Continuous Drain Current (ID, Ta) | 21 A | — |
| On-Resistance RDS(on) max | 3.4 mOhm @ VGS=10 V | — |
| On-Resistance RDS(on) typical | 3.0 mOhm @ VGS=10 V | — |
| Pembuangan Kuasa (TC=25°C) | 250 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Kemasan | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 C to +175 C (junction) | — |
| Gate Drive Voltage (recommended) | 10 V (full RDS(on)) | — |
| Configuration | Single N-channel, source-down | — |
| Packaging (suffix) | Tape & Reel (ATMA1) | — |
| RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| Status RoHS | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | 1 |