ISC037N12NM6ATMA1 vs IAUC100N10S5L054ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC037N12NM6ATMA1 disebabkan oleh Infineon dan IAUC100N10S5L054ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC037N12NM6ATMA1 | IAUC100N10S5L054ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | OptiMOS 5 trench |
| Drain-Source Voltage (Vds) | 120 V | — |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| Kemasan | PG-TDSON-8 FL (SuperSO8) | PG-TDSON-8-34 (surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55°C to +175°C |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 (IAUC automotive family) |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | — | 100 V |
| Gate-to-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS value] |
| Continuous Drain Current (I_D, Tj) | — | 101 A |
| Power Dissipation (P_D, Tc) | — | 130 W |
| R_DS(on) max at V_GS=10V | — | 5.4 mΩ |
| Qualification | — | AEC-Q101 (automotive) |