ISC058N04NM5ATMA1 vs BSC054N04NSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC058N04NM5ATMA1 disebabkan oleh Infineon dan BSC054N04NSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC058N04NM5ATMA1 BSC054N04NSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V Normal Level —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25C) 63 A —
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Kemasan PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 3 (N-Channel Trench MOSFET)
Gambaran Suhu Operasi -55C to +175C -55C to +150C
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Part Number — BSC054N04NSGATMA1
Continuous Drain Current (ID) at Tc=25C — 81 A
Continuous Drain Current (ID) at Ta=25C — 17 A
On-Resistance RDS(on) max at VGS=10V — 5.4 mOhm
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation at Tc=25C — 57 W
Power Dissipation at Ta=25C — 2.5 W
Aras MSL — 1 (per JEDEC J-STD-020)
Status RoHS — Compliant
Gate Drive Voltage (recommended) — 10 V
Lead-Free Reflow — Yes

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