ISC080N10NM6ATMA1 vs IPD034N06N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC080N10NM6ATMA1 disebabkan oleh Infineon dan IPD034N06N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC080N10NM6ATMA1 IPD034N06N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA —
Kemasan PG-TDSON-8 FL (TDSON EP) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (TJ max, per datasheet) [DATA_NEEDED: Tj min/max]
Aras MSL 1 (per JEDEC J-STD-020, per datasheet) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant (Pb-free green finish)
Lead-Free Yes —
Boson Bebas Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Series — OptiMOS 3
Technology — N-Channel Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) — 60 V
Maximum Power Dissipation (Ptot) — 167 W
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
Gate Threshold Voltage VGS(th) — 4 V at 93 uA
Gate-Source Voltage (VGS) max — [DATA_NEEDED: max VGS rating]
Pin Configuration — 3-Pin (2 + Tab)
Automotive Qualified — Yes (per Infineon product page)

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