ISC110N12NM6ATMA1 vs ISC016N08NM8ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC110N12NM6ATMA1 disebabkan oleh Infineon dan ISC016N08NM8ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC110N12NM6ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) at Ta | 11 A | 29 A |
| Continuous Drain Current (ID) at Tc | 62 A | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| On-Resistance RDS(on) max at VGS=10V | 9.8 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.1 V | — |
| Total Gate Charge (Qg) | 15.4 nC | — |
| Input Capacitance (Ciss) | 1.1 nF | — |
| Output Capacitance (Coss) | 330 pF | — |
| Reverse Transfer Capacitance (Crss) | 10 pF | — |
| Power Dissipation (Pd) at Tc | 94 W | — |
| Power Dissipation (Pd) at Ta | 3 W | — |
| Avalanche Energy (EAS) | 185 mJ | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | SuperSO8 (TDSON-8) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Gambaran Suhu Operasi | — | -55 C to +150 C (junction) |
| Technology | — | Trench-gate OptiMOS 8 (silicon) |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |
| Aras MSL | — | 1 (per JEDEC J-STD-020E classification for SuperSO8) |