ISC151N08NM6ATMA1 vs IAUC120N04S6N010ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC151N08NM6ATMA1 disebabkan oleh Infineon dan IAUC120N04S6N010ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC151N08NM6ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Arus Kumpal Tetap (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS 6 |
| Kemasan | PG-TDSON-8 FL | PG-TDSON-8-34 (5x6 mm leadless) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 8 | — |
| Channel Mode | Enhancement | — |
| Suhu Operasi | -55 °C to +175 °C | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Automotive Qualification | — | AEC-Q101 |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Aras MSL | — | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |