ISC151N08NM6ATMA1 vs IAUC120N04S6N010ATMA1 比較
詳細並排比較 ISC151N08NM6ATMA1 由 Infineon 與 IAUC120N04S6N010ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC151N08NM6ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| 連續汲極電流 (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS 6 |
| 封裝 | PG-TDSON-8 FL | PG-TDSON-8-34 (5x6 mm leadless) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| Channel Mode | Enhancement | — |
| 工作溫度 | -55 °C to +175 °C | — |
| RoHS 狀態 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Automotive Qualification | — | AEC-Q101 |
| 工作溫度範圍 | — | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |