ISK057N04LM6ATLA1 vs IPB021N10NM5LF2ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISK057N04LM6ATLA1 disebabkan oleh Infineon dan IPB021N10NM5LF2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISK057N04LM6ATLA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | Trench (OptiMOS 6) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 64 A | — |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| RDS(on) typical at VGS=10V | 5.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 39.1 W | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Kemasan / Case | PG-VSON-6-1 (PQFN 2x2) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Packaging | Tape & Reel (TR) | — |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | — |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Kemasan | — | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |