ISK057N04LM6ATLA1 vs IPB021N10NM5LF2ATMA1 比較

詳細並排比較 ISK057N04LM6ATLA1 由 Infineon 與 IPB021N10NM5LF2ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ISK057N04LM6ATLA1 ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 ✓ 啟用中
Infineon
IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon

IPB021N10NM5LF2ATMA1 ✓ 啟用中

規格比較

參數 ISK057N04LM6ATLA1 IPB021N10NM5LF2ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 —
電晶體類型 N-Channel MOSFET —
Technology Trench (OptiMOS 6) OptiMOS 5 trench-gate MOSFET (Linear FET optimized)
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tc 64 A —
Continuous Drain Current (ID) at Ta [DATA_NEEDED: ID at TA=25C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max at VGS=10V [DATA_NEEDED: RDS(on) max] —
RDS(on) typical at VGS=10V 5.7 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (Qg total) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 39.1 W —
工作溫度範圍 -55 °C to +150 °C -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range]
封裝 / 外殼 PG-VSON-6-1 (PQFN 2x2) —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
MSL 等級 1 [DATA_NEEDED: confirm MSL rating from manufacturer datasheet]
Packaging Tape & Reel (TR) —
DigiKey Part Number 448-ISK057N04LM6ATLA1TR-ND —
Part Family — OptiMOS 5 Linear FET 2
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D) at T_C=25°C — 176 A
Continuous Drain Current (I_D) at T_A=25°C — 30 A
R_DS(on) Maximum — 2.1 mΩ
Gate-Source Voltage (V_GS) Maximum — ±20 V [DATA_NEEDED: absolute max rated V_GS]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/min]
Power Dissipation (P_D) at T_C=25°C — 375 W
Power Dissipation (P_D) at T_A=25°C — 3.8 W
封裝 — PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab)
Drive Voltage (Max R_DS(on), Min R_DS(on)) — 10 V, 15 V

資料表與資源

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