ISZ033N03LF2SATMA1 vs ISC009N03LF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ033N03LF2SATMA1 disebabkan oleh Infineon dan ISC009N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISZ033N03LF2SATMA1 | ISC009N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Continuous Drain Current (ID) at TC=25C | 109 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TA=25C | 3 W | — |
| Power Dissipation (PD) at TC=25C | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | 2.35 V (typ) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | PG-TSDSON-8 FL (8-pin) | PG-TDSON-8-62 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | OptiMOS™ trench |
| Status RoHS | Compliant | Compliant |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 43 A |
| Continuous Drain Current (ID) at Tc | — | 341 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 188 W |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet]) |
| Gate Drive Voltage (VGS) | — | 10 V (typical for rated RDS(on)) |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |