K4A4G085WF-BITD vs K4A4G085WD-BCPB Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G085WF-BITD disebabkan oleh Samsung Electronics dan K4A4G085WD-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G085WF-BITD | K4A4G085WD-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasi | 512M x 8 | 512M x 8 |
| Speed | 2666 Mbps (MT/s) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| Suhu Operasi | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 78-ball FBGA (78FBGA) | FBGA-78 (PB) |
| Bank Architecture | 8 banks x 4 bank groups | — |
| Burst Length | BL8 | — |
| Latensi CAS | CL19 (typical at 2666 Mbps) | [DATA_NEEDED: CAS latency] |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount (BGA) |
| Antaramuka | Parallel, DDR4 SSTL12 | DDR4 (Double Data Rate 4) |
| Refresh | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) | [DATA_NEEDED: refresh specification] |
| Termination | ODT / dynamic ODT | — |
| Data Mask | DM supported (x8) | — |
| Application Grade | Industrial | — |
| Die Generation | — | D-die |
| Tegangan Pemberi Arus | — | 1.2 V |
| Speed Grade / Data Rate | — | [DATA_NEEDED: speed grade / data rate] |
| Status RoHS | — | Compliant (PB lead-free suffix) |
| Boson Bebas | — | [DATA_NEEDED: halogen-free status] |
| Datasheet Pages | — | 66 pages (K4A4G085WD family datasheet) |