K4A4G165WG-BCWE vs MT40A512M16TD-062E AUT:R Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G165WG-BCWE disebabkan oleh Samsung Electronics dan MT40A512M16TD-062E AUT:R disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ AktifMicron Technology
MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron
MT40A512M16TD-062E AUT:R ✓ AktifPengandingan Spesifikasi
| Parametr | K4A4G165WG-BCWE | MT40A512M16TD-062E AUT:R |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $16.90 | — |
| Jenis Ingatan | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Saiz Ingatan | 4 Gbit | 8 Gbit |
| Memory Organization | 256M x 16 | — |
| Antaramuka | Parallel | Parallel |
| Kadar Data | 3200 Mbps | — |
| Access Time | 19 ns | 19 ns |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Suhu Operasi | 0C to +85C | — |
| Kemasan | FBGA-96 | 96-FBGA (7.5 x 13 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | — |
| Status RoHS | Compliant (per JLCPCB listing) | — |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval] | [DATA_NEEDED: refresh interval spec] |
| Organisasi | — | 512M x 16 |
| Clock Frequency / Data Rate | — | 1.6 GHz |
| Automotive Qualification | — | AEC-Q100 (AUT grade) |
| Packaging Suffix | — | -R (Tape & Reel) |
| Speed Grade | — | -062E |
| Technology Family | — | DDR4 SDRAM (SDR/DDR family) |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |