K4AAG085WA-BCTD vs K4AAG085WM-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG085WA-BCTD disebabkan oleh Samsung Electronics dan K4AAG085WM-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG085WA-BCTD | K4AAG085WM-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) | [DATA_NEEDED: exact density in Gb] |
| Organisasi | 2G x 8 | x8 |
| Kadar Data | 2666 Mbps | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | 78-ball FBGA (78FBGA) | 78-ball FBGA |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Speed Grade | DDR4-2666 (-BCTD) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR4 parallel, JEDEC DDR4 ballout | SSTL12 |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) | — |
| Burst Length | BL8 (DDR4 standard) | — |
| Application Domain | Computing, networking, industrial memory | — |
| Manufacturing Standard | JEDEC DDR4 SDRAM | — |
| Lead Time / Stock | [DATA_NEEDED: current stock status] | — |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Max Data Rate | — | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) |
| Architecture | — | Bank-group DDR4 |
| Termination | — | On-Die Termination (ODT) |
| Latensi CAS | — | [DATA_NEEDED: CL of -BCRC speed grade] |
| Clock | — | Differential clock CK/CK# |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |