K4AAG085WM-BCRC vs K4AAG085WA-BCWE Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG085WM-BCRC disebabkan oleh Samsung Electronics dan K4AAG085WA-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4AAG085WM-BCRC K4AAG085WM-BCRC - 32Gb DDR4 SDRAM x8 1.2V | Samsung

K4AAG085WM-BCRC - 32Gb DDR4 SDRAM x8 1.2V | Samsung

K4AAG085WM-BCRC ✓ Aktif
Samsung Electronics
K4AAG085WA-BCWE K4AAG085WA-BCWE - 16Gb DDR4-3200 SDRAM 1.2V | Samsung

K4AAG085WA-BCWE - 16Gb DDR4-3200 SDRAM 1.2V | Samsung

K4AAG085WA-BCWE ✓ Aktif

Pengandingan Spesifikasi

Parametr K4AAG085WM-BCRC K4AAG085WA-BCWE
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density [DATA_NEEDED: exact density in Gb] 16 Gbit
Organisasi x8 2G x 8
Supply Voltage (VDD) 1.2 V —
I/O Voltage (VDDQ) 1.2 V —
Max Data Rate Up to 3200 Mbps/pin (family max per Samsung DDR4 page) —
Antaramuka SSTL12 JEDEC DDR4
Kemasan 78-ball FBGA 78-ball FBGA (9 x 11 mm, 0.8 mm pitch)
Jenis Pemasangan Surface Mount Surface Mount
Architecture Bank-group DDR4 —
Termination On-Die Termination (ODT) —
Suhu Operasi [DATA_NEEDED: operating temperature range] 0 C to 85 C
Latensi CAS [DATA_NEEDED: CL of -BCRC speed grade] —
Clock Differential clock CK/CK# —
Status RoHS [DATA_NEEDED: RoHS status] Compliant (per JLCPCB listing)
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Kadar Data — 3200 Mbps (DDR4-3200)
Tegangan Pemberi Arus — 1.2 V
Operating Voltage Range — 1.14 V to 1.26 V
Memory Width — 8-bit
Refresh — Auto-refresh (per JEDEC DDR4)
Application Class — Main memory / embedded DRAM
Manufacturer — Samsung Electronics

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