K4AAG085WM-BCRC vs K4AAG085WA-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG085WM-BCRC sa pamamagitan ng Samsung Electronics at K4AAG085WA-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG085WA-BCWE - 16Gb DDR4-3200 SDRAM 1.2V | Samsung
K4AAG085WA-BCWE ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG085WM-BCRC | K4AAG085WA-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | [DATA_NEEDED: exact density in Gb] | 16 Gbit |
| Organisasyon | x8 | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Max Data Rate | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) | — |
| Interface | SSTL12 | JEDEC DDR4 |
| Packhaging | 78-ball FBGA | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Architecture | Bank-group DDR4 | — |
| Termination | On-Die Termination (ODT) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0 C to 85 C |
| Latensya ng CAS | [DATA_NEEDED: CL of -BCRC speed grade] | — |
| Clock | Differential clock CK/CK# | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Rate ng Data | — | 3200 Mbps (DDR4-3200) |
| Volte ng Pagbibigay | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Memory Width | — | 8-bit |
| Refresh | — | Auto-refresh (per JEDEC DDR4) |
| Application Class | — | Main memory / embedded DRAM |
| Manufacturer | — | Samsung Electronics |