K4AAG085WM-BCWE vs K4AAG085WA-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG085WM-BCWE disebabkan oleh Samsung Electronics dan K4AAG085WA-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG085WM-BCWE | K4AAG085WA-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit (2 GB) |
| Organisasi | 2G x 8 | 2G x 8 |
| Kadar Data | 3200 Mbps (DDR4-3200) | 2666 Mbps |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Suhu Operasi | 0C to +85C | 0C to +85C |
| Kemasan | 78FBGA | 78-ball FBGA (78FBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR4 (JEDEC-standard) | DDR4 parallel, JEDEC DDR4 ballout |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Speed Grade | — | DDR4-2666 (-BCTD) |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Burst Length | — | BL8 (DDR4 standard) |
| Application Domain | — | Computing, networking, industrial memory |
| Manufacturing Standard | — | JEDEC DDR4 SDRAM |
| Lead Time / Stock | — | [DATA_NEEDED: current stock status] |