K4B4G1646D-BFMA vs K4B4G1646D-BMH9 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BFMA disebabkan oleh Samsung Electronics dan K4B4G1646D-BMH9 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BFMA | K4B4G1646D-BMH9 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3 SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Kadar Data | 1866 Mbps | 2133 Mb/s per pin |
| Tegangan Pemberi Arus | 1.5V | — |
| Kemasan | 96-ball FBGA | 96-ball FBGA (9x13mm) |
| Ball Pitch | 0.8mm | 0.8mm |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 (with burst chop) | 8 and 4 |
| Latensi CAS | Programmable | Programmable |
| On-Die Termination | Yes | — |
| Temperature Range | 0°C to 95°C (case) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | Yes |
| Supply Voltage (VDD) | — | 1.35V |
| Supply Voltage (VDDQ) | — | 1.35V |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Status RoHS | — | Compliant |