K4B4G1646F-BYMA vs K4B4G1646E-BYMA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646F-BYMA disebabkan oleh Samsung Electronics dan K4B4G1646E-BYMA disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646F-BYMA | K4B4G1646E-BYMA |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14.32 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V) | — |
| Kadar Data | 1866 Mbps (PC3-14900) | 1866 Mbps/pin |
| Kemasan | 96-FBGA (Lead-Free & Halogen-Free) | FBGA-96 |
| Suhu Operasi | -40°C to +95°C | 0°C to +95°C |
| Latensi CAS | CL=13 (at 1.35V) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| Antaramuka | 16-bit I/O | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Tegangan Pemberi Arus | — | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | — | 933 MHz |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| Jenis Pemasangan | — | Surface Mount |
| Bilangan Pin | — | 96 |