K6F2016U4D-FF70T00 vs K6F2016U4E-EF70T Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6F2016U4D-FF70T00 disebabkan oleh Samsung Electronics dan K6F2016U4E-EF70T disebabkan oleh Samsung Electro-Mechanics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6F2016U4D-FF70T00 - 2Mbit Async SRAM 70ns 48-FBGA | Samsung
K6F2016U4D-FF70T00 ✓ AktifSamsung Electro-Mechanics
K6F2016U4E-EF70T - 2Mbit Async SRAM 70ns 48-TFBGA | Samsung
K6F2016U4E-EF70T ✓ AktifPengandingan Spesifikasi
| Parametr | K6F2016U4D-FF70T00 | K6F2016U4E-EF70T |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electro-Mechanics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | Asynchronous SRAM | SRAM - Asynchronous |
| Saiz Ingatan | 2 Mbit | 2 Mbit |
| Organisasi | 128K x 16 | 128K x 16 |
| Access Time (tAA) | 70 ns | 70 ns |
| Supply Voltage (Vcc) | 2.7 V to 3.3 V | — |
| Antaramuka | Parallel | Parallel |
| Technology | Full CMOS | Full CMOS |
| Write Cycle Time (tWP) | 50 ns | — |
| Suhu Operasi | Industrial temperature range | [DATA_NEEDED: operating temperature range] |
| Kemasan | 48-FBGA (6x7 mm) chip-scale package | 48-TFBGA (6 x 7) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grades in Family | 55 ns, 70 ns | — |
| Power Feature | Super low power and low voltage | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Supply Voltage (VCC) | — | 2.7 V to 3.3 V |
| Active Supply Current (ICC1) | — | [DATA_NEEDED: ICC1] |
| Standby Current (ICC2) | — | [DATA_NEEDED: ICC2 for 70 ns grade] |
| Control Signals | — | CE, OE, WE |
| Refresh Requirement | — | None (static RAM) |
| Tingkat sensitiviti Air Nama (MSL) | — | [DATA_NEEDED: MSL level] |