K6F2016U4E-EF70T vs K6F2016U4D-FF70T00 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6F2016U4E-EF70T disebabkan oleh Samsung Electro-Mechanics dan K6F2016U4D-FF70T00 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K6F2016U4E-EF70T - 2Mbit Async SRAM 70ns 48-TFBGA | Samsung
K6F2016U4E-EF70T ✓ AktifSamsung Electronics
K6F2016U4D-FF70T00 - 2Mbit Async SRAM 70ns 48-FBGA | Samsung
K6F2016U4D-FF70T00 ✓ AktifPengandingan Spesifikasi
| Parametr | K6F2016U4E-EF70T | K6F2016U4D-FF70T00 |
|---|---|---|
| Merek | Samsung Electro-Mechanics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SRAM - Asynchronous | Asynchronous SRAM |
| Saiz Ingatan | 2 Mbit | 2 Mbit |
| Organisasi | 128K x 16 | 128K x 16 |
| Antaramuka | Parallel | Parallel |
| Access Time (tAA) | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.3 V | — |
| Technology | Full CMOS | Full CMOS |
| Kemasan | 48-TFBGA (6 x 7) | 48-FBGA (6x7 mm) chip-scale package |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | Industrial temperature range |
| Active Supply Current (ICC1) | [DATA_NEEDED: ICC1] | — |
| Standby Current (ICC2) | [DATA_NEEDED: ICC2 for 70 ns grade] | — |
| Control Signals | CE, OE, WE | — |
| Refresh Requirement | None (static RAM) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Tingkat sensitiviti Air Nama (MSL) | [DATA_NEEDED: MSL level] | — |
| Supply Voltage (Vcc) | — | 2.7 V to 3.3 V |
| Write Cycle Time (tWP) | — | 50 ns |
| Speed Grades in Family | — | 55 ns, 70 ns |
| Power Feature | — | Super low power and low voltage |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |