K6X0808C1D-BF55 vs K6X0808C1D-BF70T Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF55 disebabkan oleh Samsung Electronics dan K6X0808C1D-BF70T disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ AktifPengandingan Spesifikasi
| Parametr | K6X0808C1D-BF55 | K6X0808C1D-BF70T |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | Asynchronous SRAM | SRAM - Asynchronous |
| Saiz Ingatan | 256 Kbit | 256 Kbit |
| Organisasi | 32K x 8 | — |
| Access Time | 55 ns | 70 ns |
| Antaramuka | Parallel | — |
| Tegangan Pemberi Arus | 5 V | — |
| Technology | CMOS | — |
| Kemasan | 28-SOP | 28-SOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -40C to +85C (TA) |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Memory Format | SRAM | — |
| Clock Frequency | N/A (asynchronous) | — |
| Refresh | Not required (static memory) | — |
| Status RoHS | unknown | Compliant |
| Memory Organization | — | 32K x 8 |
| Memory Interface | — | Parallel |
| Write Cycle Time - Word, Page | — | 70 ns |
| Voltage - Supply | — | 4.5 V to 5.5 V |
| Process Technology | — | CMOS |
| Address Bus Width | — | 15 bit (A0-A14) |
| Lebar Bus Data | — | 8 bit (I/O0-I/O7) |
| I/O Compatibility | — | TTL compatible |
| Refresh Requirement | — | None (fully static operation) |