K6X0808C1D-GF55T vs K6X0808C1D-GF70T00 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-GF55T disebabkan oleh Samsung Electro-Mechanics dan K6X0808C1D-GF70T00 disebabkan oleh Samsung Electro-Mechanics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ AktifSamsung Electro-Mechanics
K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung
K6X0808C1D-GF70T00 ✓ AktifPengandingan Spesifikasi
| Parametr | K6X0808C1D-GF55T | K6X0808C1D-GF70T00 |
|---|---|---|
| Merek | Samsung Electro-Mechanics | Samsung Electro-Mechanics |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SRAM - Asynchronous | SRAM - Asynchronous |
| Saiz Ingatan | 256 Kbit | 256 Kbit |
| Organisasi | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 70 ns |
| Tegangan Pemberi Arus | 5.0 V | 5 V |
| Antaramuka | Parallel | Parallel |
| Process Technology | Full CMOS | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | 28-SOP (450 mil) | 28-SOP |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Active Current | [DATA_NEEDED: active current] | [DATA_NEEDED: active current] |
| Data Retention Voltage | Low data retention voltage supported (per datasheet) | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Address Bus Width | 15 bit | — |
| Lebar Bus Data | 8 bit | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | Tape & Reel (T suffix) | Tape & Reel (T00 suffix) |
| Technology | — | CMOS |
| I/O Type | — | Common Data I/O, TTL compatible |
| Clock / Refresh | — | Fully static, no clock or refresh required |