K9DVGY8J5M vs K9PKGY8S7M-CCK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9DVGY8J5M disebabkan oleh Samsung Electronics dan K9PKGY8S7M-CCK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K9DVGY8J5M | K9PKGY8S7M-CCK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | Raw NAND Flash Memory | — |
| NAND Technology | Samsung V-NAND (3D TLC) | — |
| Flash ID | EC519A3F8CCB | — |
| Density | [DATA_NEEDED: die density (Gb)] | — |
| Organization (Page/Block) | [DATA_NEEDED: page and block organization] | — |
| Jenis Antaramuka | [DATA_NEEDED: interface (toggle DDR / async)] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC voltage] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ voltage] | — |
| Program Page Time (tPROG) | [DATA_NEEDED: tPROG typical/us] | — |
| Block Erase Time (tBERS) | [DATA_NEEDED: tBERS typical/us] | — |
| Read Time (tR) | [DATA_NEEDED: tR typical/us] | — |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycle endurance] | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Package Type | [DATA_NEEDED: package type and dimensions] | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | [DATA_NEEDED: RoHS status] | Lead free / RoHS compliant |
| Memory Capacity | — | 128 Gb (16 GB) |
| Jenis Ingatan | — | NAND Flash |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Kemasan | — | BGA |
| Antaramuka | — | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Tegangan Pemberi Arus | — | [DATA_NEEDED: supply voltage] |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |