K9PDG08U5M vs K9QDGB8U7M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9PDG08U5M disebabkan oleh Samsung Electronics dan K9QDGB8U7M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Akhir HayatPengandingan Spesifikasi
| Parametr | K9PDG08U5M | K9QDGB8U7M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Unknown |
| Jenis Ingatan | NAND Flash (SLC) | NAND Flash |
| Density | 4 Gbit | [DATA_NEEDED: Density] |
| Organisasi | x8 (multiplexed I/O) | [DATA_NEEDED: Organization] |
| Tegangan Pemberi Arus | [DATA_NEEDED: supply voltage range] | [DATA_NEEDED: Supply Voltage] |
| Kemasan | TSOP1-48 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: Page Size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: Block Size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K9 NAND Flash |
| Jenis Antaramuka | — | [DATA_NEEDED: Interface Type] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |
| Read Latency | — | [DATA_NEEDED: Read Latency] |
| Package Type | — | BGA (surface mount) |