K9PDG08U5M vs K9QDGB8U7M مقایسه
مقایسه دقیق کنار به کنار K9PDG08U5M توسط Samsung Electronics و K9QDGB8U7M توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ پایان تولیدمقایسه مشخصات
| پارامتر | K9PDG08U5M | K9QDGB8U7M |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | EEPROM | Memory ICs |
| وضعیت چرخه عمر | پایان عمر محصول | Unknown |
| نوع حافظه | NAND Flash (SLC) | NAND Flash |
| Density | 4 Gbit | [DATA_NEEDED: Density] |
| سازمان | x8 (multiplexed I/O) | [DATA_NEEDED: Organization] |
| ولتاژ تغذیه | [DATA_NEEDED: supply voltage range] | [DATA_NEEDED: Supply Voltage] |
| بسته‌بندی | TSOP1-48 | — |
| نوع نصب | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: Page Size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: Block Size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| دمای کاری | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| وضعیت RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K9 NAND Flash |
| نوع رابط | — | [DATA_NEEDED: Interface Type] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |
| Read Latency | — | [DATA_NEEDED: Read Latency] |
| Package Type | — | BGA (surface mount) |