M29F160FT55N3F2 vs M29F160FT55N3E2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F160FT55N3F2 disebabkan oleh Micron Technology dan M29F160FT55N3E2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ Aktif
Micron Technology
M29F160FT55N3E2 M29F160FT55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron | TSOP-48

M29F160FT55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron | TSOP-48

M29F160FT55N3E2 ✓ Aktif

Pengandingan Spesifikasi

Parametr M29F160FT55N3F2 M29F160FT55N3E2
Merek Micron Technology Micron Technology
Kategori Flash Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan NOR Flash (Parallel, Asynchronous) NOR Flash
Density 16 Mbit (16777 kbits) 16777 kbits
Organisasi 1M x 16 / 2M x 8 —
Number of Words 1000 k 1000 k
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V (operating 4.5 V) —
Antaramuka Parallel Parallel
Synchronous / Asynchronous Asynchronous —
Boot Block Location Top boot block (FT) —
Suhu Operasi -40C to +125C -40C to +125C
Kemasan 48-Pin TSOP 48-TSOP I
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel —
Program / Erase Embedded byte/word program algorithms (controller on-chip) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant (E suffix)
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Memory Organization — 16 Mbit (1 M x 16 / 2 M x 8)
Tegangan Pemberi Arus — 5 V
Boot Block — Top Boot Block
Temperature Grade — Automotive Grade 3
Bus Width — 8-bit / 16-bit selectable (BYTE# pin)
Program/Erase — Embedded program/erase controller (byte/word algorithms)
Factory Erase State — All bits erased to 1

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