M29F200FB55M3E2 vs M29F200FB55N3E2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F200FB55M3E2 disebabkan oleh Micron Technology dan M29F200FB55N3E2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29F200FB55M3E2 M29F200FB55M3E2 - 2Mbit 55ns NOR Flash 5V 44-SO | Micron

M29F200FB55M3E2 - 2Mbit 55ns NOR Flash 5V 44-SO | Micron

M29F200FB55M3E2 ✗ Akhir Hayat
Micron Technology
M29F200FB55N3E2 M29F200FB55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron

M29F200FB55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron

M29F200FB55N3E2 ✗ Akhir Hayat

Pengandingan Spesifikasi

Parametr M29F200FB55M3E2 M29F200FB55N3E2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Akhir Hidup Akhir Hidup
Jenis Ingatan Flash - NOR Memory IC NOR Flash, Parallel
Density 2097 kbits (2 Mbit) 2 Mbit (2097 kbits)
Organisasi 128K x 16 bits 256K x 8 / 128K x 16
Number of Words 128 k 128 K
Bits per Word 16 bits 16 bits
Antaramuka Parallel Parallel, 8/16-bit selectable
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V 5 V
Boot Block Architecture Bottom Boot Block Bottom Boot Block
Program / Erase Controller Embedded byte/word program algorithms —
Suhu Operasi -40C to +125C -40C to +125C
Package Type 44-SO (SOP44) 48-pin TSOP I
Jenis Pemasangan Surface Mount Surface Mount
Merek Micron Technology Inc. —
Programming Voltage [DATA_NEEDED: program/erase supply voltage] —
Sector Organization [DATA_NEEDED: sector/erase block organization] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Endurance [DATA_NEEDED: program/erase cycles] —
Program/Erase Controller — Embedded byte/word program algorithms
Memory Cell Type — SLC NOR
Packaging — Tray

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