M29F200FT55M3F2 vs M29F800FB55M3F2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F200FT55M3F2 disebabkan oleh Micron Technology dan M29F800FB55M3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29F200FT55M3F2 M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 ✓ Aktif
Micron Technology
M29F800FB55M3F2 M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 ✓ Aktif

Pengandingan Spesifikasi

Parametr M29F200FT55M3F2 M29F800FB55M3F2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan Parallel NOR Flash NOR Flash, Parallel
Density 2 Mbit (2097 kbits) 8389 kbits (8 Mbit)
Organisasi 256K x 8 / 128K x 16 512K x 16-bit / 1M x 8-bit
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V 5 V
Boot Block Architecture Top Boot Block —
Programming Interface Embedded program/erase controller, byte or word —
Suhu Operasi -40C to +125C -40C to +125C
Automotive Qualification Yes Auto Grade 3 (temperature grade 3, +125C)
Kemasan 44-pin SO (TSOP) 44-pin SO (SOIC-44)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (T/R) —
Number of Words (x16 mode) 128 K —
Bits per Word (x16 mode) 16 bits —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Number of Words — 512 k
Bits per Word — 16 bits
Boot Block Type — Bottom Boot Block
Antaramuka — Parallel, Asynchronous
Programming — Embedded byte/word program algorithms
OTP Area — 64 byte
Packing — Tape & Reel (T/R)
Endurance — [DATA_NEEDED: program/erase endurance cycles]

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