M29F400FT55N3F2 vs M29F800FT55M3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F400FT55N3F2 disebabkan oleh Micron Technology dan M29F800FT55M3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ AktifMicron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F400FT55N3F2 | M29F800FT55M3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash (SLC) | Parallel NOR Flash |
| Saiz Ingatan | 4 Mbit | — |
| Organisasi | 256K x 16 | 512K x 16 / 1M x 8 |
| Antaramuka | Parallel | Parallel, x8/x16 selectable |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemberi Arus | 5 V | — |
| Block Architecture | Top boot block | — |
| Kemasan | 44-SO (SOP-44) | 44-pin SO (SOP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | — |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | [DATA_NEEDED: endurance cycles] |
| Suhu Operasi | [DATA_NEEDED: min operating temperature] | -40C to +125C |
| Density | — | 8 Mbit (8389 kbits) |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block Position | — | Top boot block |
| Programming Interface | — | Embedded program/erase controller |
| Packaging | — | Tape & Reel (TR) |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Status RoHS | — | Compliant (lead-free suffix F2) |