M29W064FT70N3E vs M29W064FB70N3F Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W064FT70N3E disebabkan oleh Micron Technology dan M29W064FB70N3F disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29W064FB70N3F - 64Mb NOR Flash 70ns AEC-Q100 | Micron Technology
M29W064FB70N3F ObsoletePengandingan Spesifikasi
| Parametr | M29W064FT70N3E | M29W064FB70N3F |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Jenis Ingatan | NOR Flash (Parallel) | NOR Flash, Parallel |
| Density | 64 Mbit | 64 Mbit |
| Organisasi | 8 Mb x8 or 4 Mb x16 | 8M x8 / 4M x16 |
| Antaramuka | Parallel, CFI compliant | Parallel, x8/x16 selectable (BYTE#) |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Boot Block Architecture | Top boot block (FT) | — |
| Suhu Operasi | -40C to +85C | -40C to +125C |
| Kemasan | 48-TSOP | 48-TSOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Programming Voltage | Single 3 V supply (no separate VPP required) | — |
| Erase/Program Method | Command-set page programming, block erase | — |
| Product Longevity Program | No | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read supply current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant (F suffix) |
| Boot Block Configuration | — | Bottom boot block (FB) |
| Automotive Qualification | — | AEC-Q100 qualified |
| Packaging | — | Tape & Reel (TR suffix) |
| Status Polling | — | RY/BY# hardware pin + data polling |
| Erase/Program Interface | — | Command set (M29W family compatible) |
| Part Status | — | Obsolete |