M29W160ET70N3F vs M29W160FB70N3E Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W160ET70N3F disebabkan oleh Micron Technology dan M29W160FB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W160ET70N3F M29W160ET70N3F - 16Mb 70ns AEC-Q100 NOR Flash | Micron

M29W160ET70N3F - 16Mb 70ns AEC-Q100 NOR Flash | Micron

M29W160ET70N3F ✓ Aktif
Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W160ET70N3F M29W160FB70N3E
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan Parallel NOR Flash FLASH - NOR
Saiz Ingatan 16 Mbit (2 M x 8 / 1 M x 16) 16 Mbit (2M x8 / 1M x16)
Access Time 70 ns 70 ns
Tegangan Pemberi Arus 3 V / 3.3 V —
Technology CMOS —
Boot Block Architecture Top boot —
Bus Configuration x8 / x16 selectable x8 / x16 selectable (BYTE# pin)
Kemasan 48-pin TSOP —
Jenis Pemasangan Surface Mount Surface Mount
Temperature Grade Automotive (AEC-Q100) —
Qualification AEC-Q100 qualified —
Packaging Tape and Reel Tray
Status RoHS RoHS-compliant package (F option) —
Programming Interface Parallel command set —
Number of Terminals 48 —
Antaramuka — Parallel
Supply Voltage (VCC) — 3.0 V to 3.6 V
Programming Voltage — Single supply (no separate VPP required)
Architecture — Boot block
Kemasan / Case — 48-TFSOP (0.724 in, 18.40 mm width)
Suhu Operasi — [DATA_NEEDED: operating temperature range]
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: data retention]
Status Output — Data polling / toggle bit
Block Protection — Yes (boot block protection)

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