M29W400FT55N3F vs M29F400FT55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W400FT55N3F disebabkan oleh Micron Technology dan M29F400FT55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29W400FT55N3F | M29F400FT55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash (SLC) |
| Saiz Ingatan | 4 Mbit | 4 Mbit |
| Antaramuka | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Bus Configuration | x8 / x16 (BYTE-selectable) | — |
| Organisasi | 4Mbit, block-organized, top boot block | 256K x 16 |
| Program/Erase | Block erase, word/byte program | — |
| Kemasan | 48-TSOP I | 44-SO (SOP-44) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: min operating temperature] |
| Tegangan Pemberi Arus | [DATA_NEEDED: supply voltage range] | 5 V |
| Suspend/Resume | Erase/program suspend and resume | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Packaging | Tape & Reel (TR suffix) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Prefix F in MPN | Pb-free package suffix | — |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |