M29W400FT55N3F vs M29F400FT55N3F2 Karşılaştırma
Ayrıntılı yan yana karşılaştırma M29W400FT55N3F tarafından Micron Technology ve M29F400FT55N3F2 tarafından Micron TechnologyAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ AktifÖzellik Karşılaştırması
| Parametre | M29W400FT55N3F | M29F400FT55N3F2 |
|---|---|---|
| Marka | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Bellek Türü | NOR Flash | NOR Flash (SLC) |
| Bellek Boyutu | 4 Mbit | 4 Mbit |
| Arayüz | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Bus Configuration | x8 / x16 (BYTE-selectable) | — |
| Organizasyon | 4Mbit, block-organized, top boot block | 256K x 16 |
| Program/Erase | Block erase, word/byte program | — |
| Paket | 48-TSOP I | 44-SO (SOP-44) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: min operating temperature] |
| Besleme Gerilimi | [DATA_NEEDED: supply voltage range] | 5 V |
| Suspend/Resume | Erase/program suspend and resume | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Packaging | Tape & Reel (TR suffix) | — |
| RoHS Durumu | [DATA_NEEDED: RoHS status] | — |
| Prefix F in MPN | Pb-free package suffix | — |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |