MRF6S18100NBR1 vs MRF5S21045NBR1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF6S18100NBR1 disebabkan oleh NXP Semiconductors dan MRF5S21045NBR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRF6S18100NBR1 | MRF5S21045NBR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Obsolete | Obsolete |
| Jenis Transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application | RF Power Amplifier (GSM/GSM EDGE base station) | W-CDMA base station, TDMA/CDMA, multicarrier amplifier |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | 2.12 GHz |
| Drain-Source Voltage (V(BR)DSS) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Test Drain Current | 900 mA | — |
| Output Power (Pout) | 100 W | — |
| Power Gain (Gps) | 14.5 dB (typical at 1.99 GHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Kemasan / Case | TO-272 WB-4 | — |
| Supplier Device Package | TO-272 WB-4 | TO-272 WB-4 |
| Jenis Pemasangan | Surface Mount / Flange Mount | Surface Mount |
| Configuration | Single, common-source | — |
| Status RoHS | Compliant (per NXP product page) | — |
| Operating Mode | Class AB / Class C (per design) | Class AB |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Output Power (Avg) | — | 10 W |
| Power Gain | — | 14.5 dB (typical at 2.12 GHz, 28 V) |
| Drain-Source Voltage (Max Rated) | — | 68 V |
| Test Supply Voltage (Vdd) | — | 28 V |
| Test Current | — | 500 mA |
| Kemasan | — | TO-272 WB-4 (over-molded plastic) |
| Technology | — | Laterally Diffused MOS (LDMOS) |
| Compliance | — | RoHS (status per distributor listing - confirm at order) |
| Manufacturer | — | NXP USA Inc. (formerly Freescale Semiconductor) |