MRF7S21080HSR3 vs MRF7S21080HR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF7S21080HSR3 disebabkan oleh NXP Semiconductors dan MRF7S21080HR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRF7S21080HSR3 | MRF7S21080HR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF7S21080HSR3 | — |
| Jenis Transistor | Lateral N-Channel RF Power MOSFET | LDMOS, N-Channel Enhancement-Mode |
| Technology | Lateral MOSFET, enhancement-mode | RF Power Field Effect Transistor (lateral MOSFET) |
| Operating Frequency | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2167.5 MHz | 2.11 GHz to 2.17 GHz |
| Drain-Source Voltage (VDS max) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V | — |
| Quiescent Drain Current (IDQ) | 800 mA | — |
| Output Power (Average, W-CDMA) | 22 W | — |
| Power Gain | 18 dB | 18 dB |
| Drain Efficiency | 32% | — |
| ACPR at 5 MHz Offset | -38 dBc | — |
| Device Output Signal PAR | 6.5 dB at 0.01% CCDF | — |
| Channel Bandwidth | 3.84 MHz | 3.84 MHz |
| Kemasan | NI-780S (NI-780HS) ceramic-metal sealed | NI-780S-4S2S (NI-780, 3-pin ceramic, flange mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount / Flange Mount |
| Configuration | Single | — |
| Terminal Form | Flat | — |
| Package Body Material | Ceramic, metal-sealed cofired | — |
| Lead-Free | Yes | — |
| Status RoHS | Compliant (per NXP product page) | — |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Rated Drain Voltage | — | 65 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Current (IDQ) | — | 800 mA |
| Output Power (Avg, W-CDMA) | — | 22 W Avg. |
| Drain Efficiency (typical) | — | 32 % |
| ACPR @ 5 MHz Offset | — | -38 dBc in 3.84 MHz channel |
| Output Signal PAR | — | 6.5 dB at 0.01% CCDF |
| Input Signal PAR | — | 7.5 dB at 0.01% CCDF |
| Application | — | CDMA / W-CDMA / LTE base-station power amplifiers |