MRF8S21100HSR3 vs MRF6S21100NR1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF8S21100HSR3 disebabkan oleh NXP Semiconductors dan MRF6S21100NR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | MRF8S21100HSR3 | MRF6S21100NR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOSFET) | RF Power LDMOS (7th-generation) |
| Drain-Source Voltage (V(BR)DSS) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.14 GHz | — |
| Output Power (CW, typical) | 100 W | — |
| Average Output Power (W-CDMA) | 24 W | — |
| Power Gain (typ) | 18.3 dB at 2.14 GHz | — |
| Drain Current (ID, max) | [DATA_NEEDED: max ID rating] | — |
| Kemasan / Case | NI-780S (Case 465A-06), 3-pin ceramic flange | TO-270 WB-4 (Case 1486-03, Style 1) |
| Configuration | Single, push-pull N/A | — |
| Jenis Pemasangan | Chassis / flange mount, screw-down | Surface Mount (plastic overmold) |
| Operating Class | Class AB or Class C | — |
| Application | W-CDMA, LTE base-station power amplifiers | — |
| Status RoHS | Compliant (per NXP product family) | [DATA_NEEDED: confirm RoHS compliance status] |
| Lead-Free | Yes | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Frequency Band | — | 2110 MHz to 2170 MHz (W-CDMA downlink) |
| Drain Voltage (VDD) | — | 28 V |
| Drain Current (Continuous) | — | 1.05 A |
| Drain Current (Pulsed) | — | [DATA_NEEDED: pulsed drain current value] |
| Power Gain | — | 14.5 dB typical at 2.11 GHz |
| Output Power (Pout) | — | 23 W average (W-CDMA) |
| Quiescent Current (IDQ) | — | 1600 mA |
| Operating Mode | — | Class AB |
| Modulation Support | — | W-CDMA, TDMA, CDMA, multi-carrier |
| Drain-Source Breakdown (V(BR)DSS) | — | 68 V (rated) |