MRF8S21100HSR3 vs MRF8S18120HSR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF8S21100HSR3 disebabkan oleh NXP Semiconductors dan MRF8S18120HSR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ AktifNXP Semiconductors
MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS
MRF8S18120HSR3 ✓ AktifPengandingan Spesifikasi
| Parametr | MRF8S21100HSR3 | MRF8S18120HSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Drain-Source Voltage (V(BR)DSS) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.14 GHz | — |
| Output Power (CW, typical) | 100 W | — |
| Average Output Power (W-CDMA) | 24 W | — |
| Power Gain (typ) | 18.3 dB at 2.14 GHz | — |
| Drain Current (ID, max) | [DATA_NEEDED: max ID rating] | — |
| Kemasan / Case | NI-780S (Case 465A-06), 3-pin ceramic flange | — |
| Configuration | Single, push-pull N/A | — |
| Jenis Pemasangan | Chassis / flange mount, screw-down | — |
| Operating Class | Class AB or Class C | Class AB / Class C |
| Application | W-CDMA, LTE base-station power amplifiers | GSM / GSM EDGE cellular base station power amplifiers |
| Status RoHS | Compliant (per NXP product family) | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | NXP Semiconductors |
| Part Number | — | MRF8S18120HSR3 |
| Drain-Source Voltage (Max) | — | 65 V |
| Test Drain Voltage | — | 28 V |
| Test Quiescent Current (IDQ) | — | 800 mA |
| Operating Frequency | — | 1805 MHz to 1880 MHz |
| Center Frequency | — | 1.81 GHz |
| Output Power (CW) | — | 72 W |
| Power Gain (Typ) | — | 18.2 dB |
| Drain Current (Test) | — | 800 mA |
| Package Type | — | NI-780S |
| Gaya Pemasangan | — | Surface Mount (ceramic flange) |