MRF8S21100HSR3 vs MRF8S18120HSR3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF8S21100HSR3 sa pamamagitan ng NXP Semiconductors at MRF8S18120HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF8S21100HSR3 MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP

MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP

MRF8S21100HSR3 ✓ Nakahanda
NXP Semiconductors
MRF8S18120HSR3 MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS

MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS

MRF8S18120HSR3 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF8S21100HSR3 MRF8S18120HSR3
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology LDMOS (Laterally Diffused MOSFET) —
Drain-Source Voltage (V(BR)DSS) 65 V —
Operating Drain Voltage (VDD) 28 V nominal —
Frequency Range 2110 MHz to 2170 MHz —
Test Frequency 2.14 GHz —
Output Power (CW, typical) 100 W —
Average Output Power (W-CDMA) 24 W —
Power Gain (typ) 18.3 dB at 2.14 GHz —
Drain Current (ID, max) [DATA_NEEDED: max ID rating] —
Packhaging / Kaso NI-780S (Case 465A-06), 3-pin ceramic flange —
Configuration Single, push-pull N/A —
Uri ng Pagpapasok Chassis / flange mount, screw-down —
Operating Class Class AB or Class C Class AB / Class C
Application W-CDMA, LTE base-station power amplifiers GSM / GSM EDGE cellular base station power amplifiers
Tindminan RoHS Compliant (per NXP product family) Compliant
Lead-Free Yes —
Manufacturer — NXP Semiconductors
Part Number — MRF8S18120HSR3
Drain-Source Voltage (Max) — 65 V
Test Drain Voltage — 28 V
Test Quiescent Current (IDQ) — 800 mA
Operating Frequency — 1805 MHz to 1880 MHz
Center Frequency — 1.81 GHz
Output Power (CW) — 72 W
Power Gain (Typ) — 18.2 dB
Drain Current (Test) — 800 mA
Package Type — NI-780S
Style ng Pagpapasok — Surface Mount (ceramic flange)

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