MRF8S21100HSR3 vs MRF8S18120HSR3 比較
詳細並排比較 MRF8S21100HSR3 由 NXP Semiconductors 與 MRF8S18120HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF8S21100HSR3 | MRF8S18120HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Drain-Source Voltage (V(BR)DSS) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.14 GHz | — |
| Output Power (CW, typical) | 100 W | — |
| Average Output Power (W-CDMA) | 24 W | — |
| Power Gain (typ) | 18.3 dB at 2.14 GHz | — |
| Drain Current (ID, max) | [DATA_NEEDED: max ID rating] | — |
| 封裝 / 外殼 | NI-780S (Case 465A-06), 3-pin ceramic flange | — |
| Configuration | Single, push-pull N/A | — |
| 安裝類型 | Chassis / flange mount, screw-down | — |
| Operating Class | Class AB or Class C | Class AB / Class C |
| Application | W-CDMA, LTE base-station power amplifiers | GSM / GSM EDGE cellular base station power amplifiers |
| RoHS 狀態 | Compliant (per NXP product family) | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | NXP Semiconductors |
| Part Number | — | MRF8S18120HSR3 |
| Drain-Source Voltage (Max) | — | 65 V |
| Test Drain Voltage | — | 28 V |
| Test Quiescent Current (IDQ) | — | 800 mA |
| Operating Frequency | — | 1805 MHz to 1880 MHz |
| Center Frequency | — | 1.81 GHz |
| Output Power (CW) | — | 72 W |
| Power Gain (Typ) | — | 18.2 dB |
| Drain Current (Test) | — | 800 mA |
| Package Type | — | NI-780S |
| 安裝方式 | — | Surface Mount (ceramic flange) |